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D. K. Gaskill, Silicon carbide as a platform for power electronics, Science. 324 (2009) 1398-1400. [4] W. C. Lien, N. Ferralis, C. Carraro, Growth of epitaxial 3C-SiC films on Si(100) via low temperature SiC buffer layer, Cryst. Growth Des. 10 (2009) 36-39. [5] A. Ellison, J. Zhang, A. Henry, E. Janzen, Epitaxial growth of SiC in a chimney CVD reactor, J. Cryst. Growth. 235 (2002) 225-239. [6] G. Aylward, T. 115. [7] F. Liao, S. M. R. L. Girshick, High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma, Mater.

508 (2012) 65-68. F. Zhang, R. Tu, T. Goto, Densification, microstructure and mechanical properties of SiO2-cBN composites by spark plasma sintering, Ceram. Int. 38 (2012) 351-356. Key Engineering Materials Vol. jp Keywords: high-speed; deposition temperature (Tdep); β-SiC; deposition rate (Rdep); Halide CVD Abstract. Polycrystalline β-SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition.

Soc. 94 (2011) 991-993. J. -Y. -W. Kim, Control of electrical resistivity in silicon carbide ceramics sintered with aluminum nitride and yttria, J. Am. Ceram. Soc. 96 (2013) 3463-3469. [7] G. A. Slack, Thermal conductivity of pure and impure silicon, silicon carbide, and diamond, J. Appl. Phys. 35, (1964) 3460-3466. [8] Y. Takeda, Development of high-thermal-conductive SiC ceramics, Ceram. Bull. 67 (1988) 1961-1963. -W. -Y. S. Seo, Microstructure and thermal conductivity of silicon carbide with yttria and scandia, J.

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Advanced ceramics and novel processing


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